Light-emitting electronic device
文献类型：专利
| 作者 | HANEDA MAKOTO; HIRAO MOTONAO; ICHIKI MASAHIRO; SEKO ICHIROU; NAKA HIROSHI |
| 发表日期 | 1985-08-05 |
| 专利号 | JP1985148183A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Light-emitting electronic device |
| 英文摘要 | PURPOSE:To stabilize the flow of currents by bringing the width of a neck in the main surface of a substrate to 0mum and the thickness of an active layer to 0.15mum and keeping the position of the active layer within a predetermined range to the neck in a laser chip having buried hetero-structure. CONSTITUTION:In a wafer 16 consisting of a substrate 1, a buffer layer 2, an active layer 3, a clad layer 4 and a cap layer 5, the thickness of the active layer 3 is brought to 0.15mum and the thickness of other layers to 1-2mum. A mask 17 is formed on the main surface of the wafer 16, and forward mesa structure is shaped in the substrate 1 and the buffer layer 2 and reverse mesa structure 6 in the clad layer 4 and the cap layer 5 by etching the whole by an etching liquid. Necks 7 are formed on boundaries among both structure, the width of the necks is set to 0.9-5mum, and the positions of the central height of the active layers 3 are set within a range extending over height intruding to the clad layer 4 side by 0.5mum to the height of the necks 7 and intruding to the buffer layer 2 side by 0.2mum. |
| 公开日期 | 1985-08-05 |
| 申请日期 | 1984-01-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82812]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | HANEDA MAKOTO,HIRAO MOTONAO,ICHIKI MASAHIRO,et al. Light-emitting electronic device. JP1985148183A. 1985-08-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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