Semiconductor laser
文献类型：专利
| 作者 | HAMADA HIROYOSHI; SHONO MASAYUKI; HONDA MASAHARU; HIROYAMA RYOJI |
| 发表日期 | 1992-03-09 |
| 专利号 | JP1992074487A |
| 著作权人 | 三洋電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To alleviate input of p-type, n-type dopants into an active layer by providing p-type and n-type clad layers made of InGaAlP compound semiconductor, a nondoped InGaP active layer, and a nondoped clad layer between the active layer and the p-type, n-type clad layers. CONSTITUTION:A Cr-Au electrode l, a p-type GaAs cap layer 2, an n-type GaAs block layer 3, a p-type In(Ga0.5Al0.5)P clad layer 4, an In(Ga0.5Al0.5)P nondoped clad layer 5, a nondoped InGaP active layer 6, an In(Ga0.5Al0.5)P nondoped clad layer 7, an n-type In(Ga0.5Al0.5)P clad layer 8, an n-type InGaP buffer layer 9, an n-type GaAs substrate 10, and a Cr-Sn-Au electrode 11 are provided. The respective layers are sequentially epitaxially grown on one main surface of the substrate 10 by using known MOCVD method. When Si is used as the n-type dopant and Zn is used as the p-type dopant, input of the dopant into the layer 6 is alleviated. |
| 公开日期 | 1992-03-09 |
| 申请日期 | 1990-07-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82814]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三洋電機株式会社 |
| 推荐引用方式 GB/T 7714 | HAMADA HIROYOSHI,SHONO MASAYUKI,HONDA MASAHARU,et al. Semiconductor laser. JP1992074487A. 1992-03-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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