-
文献类型：专利
| 作者 | ISHIDA JUJI; FUKADA HAYAMIZU; TANAKA HARUO; NAKADA NAOTARO |
| 发表日期 | 1993-03-17 |
| 专利号 | JP1993019837B2 |
| 著作权人 | ROHM KK |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To inhibit the deformation of a striped groove at a minimum by laminating a P-type GaAs protective layer set in film thickness, in which the evaporation of an exposed section in a current stopping layer is suppressed minimally, in a first growth process in a thermal cleaning process. CONSTITUTION:The film thickness of a protective layer 24 is formed in size, in which the evaporation of an exposed section 25' in a current stopping layer 25 is inhibited at a minimum in a thermal cleaning process as a post-process, and set in approximately 50-500Angstrom . A substrate 10 using a photo-resist 50 as a mask is dipped into a solution 60 having an etching rate of N>>P under beam irradiation from a light source such as a halogen lamp, and an evapora tion stopping layer 26 and the current stopping layer 25 are etched selectively to a striped shape along a laser resonator wavelength. The substrate 10 is heated at approximately 720 deg.C or higher while the substrate 10 is irradiated by arsenic molecular beams in a MBE device, thus evaporating impurities such as an oxide adhering in an etching process and the protective layer 24, the surface thereof is exposed to a striped shape. Accordingly, a striped groove 30 in depth reaching a first upper clad layer 23 is formed. |
| 公开日期 | 1993-03-17 |
| 申请日期 | 1985-01-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82829]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ROHM KK |
| 推荐引用方式 GB/T 7714 | ISHIDA JUJI,FUKADA HAYAMIZU,TANAKA HARUO,et al. -. JP1993019837B2. 1993-03-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。