Semiconductor laser
文献类型：专利
| 作者 | MAMINE TAKAYOSHI; OKADA TSUNEICHI; YONEYAMA OSAMU |
| 发表日期 | 1985-11-09 |
| 专利号 | JP1985225488A |
| 著作权人 | SONY KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To contrive the stabilization of a junction position and characteristics by inhibiting the increase of threshold current Ith by a method wherein layers with a small amount of impurity doping are provided in the first and second clad layers on the side of contact with an active layer. CONSTITUTION:The first clad layer 2 and the second clad layer 4 with forbidden band widths larger than that of the active layer 3 are provided with low impurity concentration layers 2a and 4a, respectively, on the sides of contact with the active layer 3a, and with high impurity concentration layers 2b and 4b, respectively, on the sides of keeping away from the active layer 3. Reduction in impurity concentration of the parts of the clad layers 2 and 4 in contact with the active layer 3 enables the inhibition of a current path spreading laterally so as to penetrate down to a non-implanted region 6 and the lateral diffusion of implanted carriers, resulting in the reduction in threshold current Ith. Besides, the movement of acceptors and donors caused by the heat during epitaxial growth can be inhibited, thereby stabilizing the junction position or the characteristics. Further, the series resistance and the leakage of carriers to the hetero junction can be reduced, accordingly, the temperature-dependance of threshold current Ith can be dimished. |
| 公开日期 | 1985-11-09 |
| 申请日期 | 1984-04-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82831]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY KK |
| 推荐引用方式 GB/T 7714 | MAMINE TAKAYOSHI,OKADA TSUNEICHI,YONEYAMA OSAMU. Semiconductor laser. JP1985225488A. 1985-11-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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