Semiconductor light emitting device
文献类型：专利
| 作者 | KAMITE KIYOTSUGU |
| 发表日期 | 1985-12-16 |
| 专利号 | JP1985254687A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To improve the deterioration in noise characteristic by a method wherein the titled device is equipped with an active region formed so that the longitudinal end surface of a stripe may be present inside the resonator end surface at a given interval and with a photo absorption region between the former end surface and the latter end surface. CONSTITUTION:An N type AlGaAs clad layer 2, an N type GaAs active layer 3, an N type AlGaAs clad layer 4, a P type GaAs current block layer 5, and an N type GaAs cap layer 6 are formed on a GaAs substrate The longitudinal end surface 9 is formed in the P type active region produced by selective diffusion e.g. of zinc. The photo absorption region 11 is formed in the window part 8 between the longitudinal end surface 9 and the resonator end surface 10. This construction enables the light emitted out of the titled device and returning by reflection on an irradiated object to be absorbed or attenuated; therefore, the possibility that the return light comes into the active region and deteriorates the noise characteristic is eliminated. |
| 公开日期 | 1985-12-16 |
| 申请日期 | 1984-05-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82833]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | KAMITE KIYOTSUGU. Semiconductor light emitting device. JP1985254687A. 1985-12-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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