Semiconductor laser and its manufacture
文献类型：专利
| 作者 | HOSOI YOJI; TSUBOTA TAKASHI |
| 发表日期 | 1989-03-31 |
| 专利号 | JP1989086581A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and its manufacture |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser at a good yield which oscillates in a basic lateral mode and a single vertical mode, and has a low threshold level by a method wherein a mesa stripe is formed on a substrate for crystal growth, a current constriction structure and a ray confinement structure are formed by dispersion of impurities from the substrate. CONSTITUTION:N-type block layer 3, P-type clad layer 4 and N-type active layer 5 are formed, and the upper part of the mesa stripe 2 is formed as P-type region 6, then reverse bias state in this part is eliminated to make a current path in that part. On the other hand, in the region outside the mesa stripe, reverse bias is formed on the interface between the P-type clad layer 4 and the N-type block layer 3, accordingly no current passes there. That is, the current path is limited only on the mesa stripe 2 to provide a current constriction structure, and a low threshold can be prepared. Further when a P-type region is formed as in the above, refractive index of the P-type growth layer is greater than that of the N-type growth layer, consequently the structure for beam confinement is formed by the difference of the refractive indexes in the horizontal direction in the active layer to effect confinement of the beam. Accordingly oscillations in basic lateral mode and a single vertical mode are made possible. |
| 公开日期 | 1989-03-31 |
| 申请日期 | 1987-09-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82834]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HOSOI YOJI,TSUBOTA TAKASHI. Semiconductor laser and its manufacture. JP1989086581A. 1989-03-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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