Semiconductor laser element
文献类型：专利
| 作者 | MATSUMOTO AKIHIRO; HOSOBANE HIROYUKI; MATSUI KANEKI |
| 发表日期 | 1991-04-10 |
| 专利号 | JP1991085785A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To prevent unstable operation from occurring where laser light intensity distribution is shifted horizontally even if the number of carries which are injected into an activation layer increases by providing a stripe-shaped part with a higher refractive index in the center of a stripe-shaped refractive index type waveguide path. CONSTITUTION:An n-Al0.33Ga0.67As first clad layer 2, a p-Al0.03Ga0.92As activation layer 3, and a p-Al0.33Ga0.67As second clad layer 4 are laminated on an n-GaAs substrate A stripe-shaped first ridge 10 is formed at the second clad layer 4 and a stripe-shaped second ridge 11 is formed in the center of the first ridge 10. n-GaAs light absorption layers 6 with a smaller energy gap than the activation layer 3 is formed at both sides of the first ridge 10 on the second clad layer 4. An Al0.42Ga0.58As third clad layer 5 is formed on the light absorption layer 6 and on the first ridge 10 of the second clad layer 4. The third clad layer 5 has a smaller refractive index than that of the second clad layer 4. |
| 公开日期 | 1991-04-10 |
| 申请日期 | 1989-08-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82848]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | MATSUMOTO AKIHIRO,HOSOBANE HIROYUKI,MATSUI KANEKI. Semiconductor laser element. JP1991085785A. 1991-04-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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