Semiconductor laser
文献类型：专利
| 作者 | NISHIJIMA YOSHITO; SHINOHARA KOUJI; EBE KOUJI; FUKUDA HIROKAZU |
| 发表日期 | 1985-07-01 |
| 专利号 | JP1985123085A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To reduce leakage currents directly flowing through a buried layer from a buffer layer, and to prevent the lowering of oscillation efficiency by forming the buried layer, to which a second mesa-stripe is shaped, while coating an active layer in a first mesa-stripe. CONSTITUTION:P type PbTe is used as a substrate 1, P type PbTeSe is deposited on the P type PbTe as a buffer layer 2, un-doped PbSnTe is deposited on the layer 2 as an active layer 3, and N type PbTeSe is deposited on the layer 3 as a protective layer 4. A first mesa-stripe is formed to the surface of the four-layer crystal. The protective layer 4 is formed for protecting the active layer from contamination and damage during the process. N type PbTeSe is deposited so that the whole surface of the substrate is flattened as a buried layer 5. A second mesa-stripe is shaped to the surface of the five-layer crystal while coating the first mesa-stripe. The surface of the substrate is anodic-oxidized to obtain an insulating layer 6, an electrode window is bored to the top section of the second mesa-stripe, and gold is applied to acquire an electrode 7. An electrode 8 is also formed similarly to the back of the substrate, thus completing a laser. |
| 公开日期 | 1985-07-01 |
| 申请日期 | 1983-12-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82850]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | NISHIJIMA YOSHITO,SHINOHARA KOUJI,EBE KOUJI,et al. Semiconductor laser. JP1985123085A. 1985-07-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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