Semiconductor laser
文献类型：专利
| 作者 | WATANABE HISATSUNE |
| 发表日期 | 1984-02-18 |
| 专利号 | JP1984031082A |
| 著作权人 | KOGYO GIJUTSUIN (JAPAN) |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser of high efficiency and low threshold value by a method wherein an N type clad layer and a P type clad layer are composed of semiconductor substance having a fixed band gap and electron affinity to an active layer. CONSTITUTION:The P type clad layer 2 doped with Zn, the active layer 3 which emits laser light, the N type clad layer 4, and an N type contact layer 5 are formed on the surface of a P type GaAs substrate 1 doped with Zn. Then, electrodes 6 and 7 are formed on this wafer. In a double hetero junction laser constituted in this manner, the semiconductor substance whose band width is larger than that of the active layer 3 and electron affinity approximately equal is used as the N type clad layer 4. While, the semiconductor substance whose band gap is larger and sum of electron affinity and band gap approximately equal to that of the active layer 3 is used as the P type clad layer. Thereby, energy notch eliminates; accordingly the decrease of luminous efficiency due to the energy notch can be avoided. |
| 公开日期 | 1984-02-18 |
| 申请日期 | 1982-08-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82865]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOGYO GIJUTSUIN (JAPAN) |
| 推荐引用方式 GB/T 7714 | WATANABE HISATSUNE. Semiconductor laser. JP1984031082A. 1984-02-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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