Manufacture of semiconductor light emitting device
文献类型：专利
| 作者 | KIHARA KATSUHIRO |
| 发表日期 | 1986-11-08 |
| 专利号 | JP1986251182A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light emitting device |
| 英文摘要 | PURPOSE:To repress the conductive type conversion of a current blocking layer and a leakage current due to a thyristor effect by inserting a protective layer in between the current blocking layer and a cap layer and using a semiconductor with a large forbidden band width as the protective layer. CONSTITUTION:A buffer layer 2, an active layer 3 and a clad layer 4 are sequentially laminated on a substrate 1 by way of a liquid phase epitaxial growth (LPE). Then, an SiO2 layer is covered over the whole surface of the substrate 1 and the SiO2 layer 9 is left in an active region forming portion through a patterning. An inverted mesa is formed by a bromomethanol etchant using the SiO2 layer 9 as a mask. Then, a buried layer 5, a current blocking layer 6 and a protective layer 7 are sequentially laminated by means of a second time LPE using the layer 9 as another mask. The layer 9 is removed and a cap layer 8 is laminated over the whole surface of the substrate |
| 公开日期 | 1986-11-08 |
| 申请日期 | 1985-04-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82869]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | KIHARA KATSUHIRO. Manufacture of semiconductor light emitting device. JP1986251182A. 1986-11-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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