Semiconductor laser
文献类型：专利
| 作者 | YAMADA TOMOYUKI; KUNII TATSUO; KAWAI YOSHIO |
| 发表日期 | 1990-04-23 |
| 专利号 | JP1990109385A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To realize visible-light/invisible-light multi-wavelength lasers with semiconductor lasers by providing an active layer for visible light having a specified thickness on or beneath an active layer for invisible light or so as to hold said active layer for the visible light between the active layers for the invisible light, and providing a specified relationship among the band gaps of the layers. CONSTITUTION:On an n-type GaAs substrate 1, the folloing layers are sequentially grown: an n-type AlxGa1-xAs clad layer 2; an AlyGa1-yAs active layer 3 for visible light; an AlzGa1-zAs active layer 4 for invisible light; an AlyGa1-yAs active layer 5 for visible light; a p-type AlxAs1-xAs clad layer 6; and a p-type GaAs cap layer 7. A current injecting region 10 and an upper electrode 8 are formed at the layer 7. A lower electrode 9 is formed beneath the substrate The thicknesses of the layers 3 and 5 are made to be about 0.3mum. A relationship Eg1 |
| 公开日期 | 1990-04-23 |
| 申请日期 | 1988-10-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82870]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | YAMADA TOMOYUKI,KUNII TATSUO,KAWAI YOSHIO. Semiconductor laser. JP1990109385A. 1990-04-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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