Semiconductor laser device
文献类型：专利
| 作者 | HORIUCHI SHIGEKI; OOTAKI KANAME; YAMANAKA KENICHI; TAKAMIYA SABUROU |
| 发表日期 | 1982-11-12 |
| 专利号 | JP1982184273A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a matter effectively concentrating on a desired region by current available for laser oscillation at a threshold value lower than conventional one, by providing a specific band semiconductor region on an active layer under a V-shaped groove, etc. CONSTITUTION:An n type AlGaAs layer 2 and p type or n type GaAs active layer 3 are successively formed on an n type GaAs substrate 1 by epitaxial growth. Next, a p type AlGaAs layer is formed on this active layer 3 to remove this layer by etching leaving only the part which touches the lower part of the V-shaped groove in a required width to form a band p type AlGaAs region 1 Further, a p type AlGaAs layer 4, n type AlGaAs layer 5 and n type GaAs layer 6 are successively formed thereon to form the groove 7 along the upper part of the region 11 later to form a p type region 8 reaching the region 11 by Zn diffusion. Thereafter, a p side electrode 9 and n side electrode 10 are respectively on a p type region 8 and n type GaAs substrate |
| 公开日期 | 1982-11-12 |
| 申请日期 | 1981-05-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82875]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | HORIUCHI SHIGEKI,OOTAKI KANAME,YAMANAKA KENICHI,et al. Semiconductor laser device. JP1982184273A. 1982-11-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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