半導体レーザ及びその製造方法
文献类型：专利
| 作者 | 生和 義人 |
| 发表日期 | 1996-03-21 |
| 专利号 | JP1996028554B2 |
| 著作权人 | 三菱電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ及びその製造方法 |
| 英文摘要 | PURPOSE:To make semiconductor laser low in threshold current and to enable its oscillation mode to be set to a basic mode by a method wherein a superlattice layer which is high in reflectivity and serves as a current path is provided to a circular mesa groove between an active layer and an etching stopper layer, and a disordered layer which is high in reflectivity and possessed of a current blocking effect is provided to the part other than the circular mesa groove between the active layer and the etching stopper layer. CONSTITUTION:An etching stopper layer 12, an N-type AlGaAs/AlAs superlattice 13, a P-type clad layer 21, a P-type layer 14, an N-type clad layer 15, and an N-type contact layer 16 are successively grown on a substrate 11, the N-type contact layer 16 and the N-type clad layer 15 are processed to be possessed of a current constricting action, and a circular mesa groove 8 is provided to the substrate 11 through etching. Then, Be (P-type) ions are implanted into a region which includes the circular mesa groove 8, which is annealed to form a P-type impurity diffused region 18. After annealing, the region where Be ions are implanted and the other region where no ion is implanted are made to serve as a P-type AlGaAs/AlAs superlattice layer 19 and an N-type Al GaAs disordered layer 20 respectively. |
| 公开日期 | 1996-03-21 |
| 申请日期 | 1989-10-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82879]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三菱電機株式会社 |
| 推荐引用方式 GB/T 7714 | 生和 義人. 半導体レーザ及びその製造方法. JP1996028554B2. 1996-03-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。