Semiconductor laser
文献类型：专利
| 作者 | KATSUTA HIROHIKO; WATANABE TSUTOMU; NOMURA TAKASHI; SUZAKI SHINZO; OSANAI YUTAKA |
| 发表日期 | 1988-07-13 |
| 专利号 | JP1988169089A |
| 著作权人 | 株式会社フジクラ |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To prevent the melt-back development in each layer by laminating a plurality of semiconductor layers where a crystal composition (composition of wave lengths) gradually varies from its composition of an active layer to the active layer and other semiconductor layers, especially among clad layers. CONSTITUTION:An InGaAsP active layer 2 that has grown on a substrate 1 as well as the first and second anti-melt-back layers 6 and 7 InGaAsP that have grown on each active layer 2 grow still more. An n-InP clad layer 4 grows on the second anti-melt-back layer 7. In this way, the composition of wave length varies from the active layer 2 to the clad layer 4 by preparing two layers; anti-melt-back layers 6 and 7. This arrangement helps prevent almost completely the melt-back development in the active layer 2 or anti-melt-back layers 6 and 7. |
| 公开日期 | 1988-07-13 |
| 申请日期 | 1987-01-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82881]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社フジクラ |
| 推荐引用方式 GB/T 7714 | KATSUTA HIROHIKO,WATANABE TSUTOMU,NOMURA TAKASHI,et al. Semiconductor laser. JP1988169089A. 1988-07-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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