Semiconductor device
文献类型：专利
| 作者 | SAITOU KATSUTOSHI; MORI MITSUHIRO; MORI TAKAO; SATOU NOBU; KOBAYASHI MASAYOSHI; CHIBA KATSUAKI; KATOU HIROSHI; KOBAYASHI MASAMICHI |
| 发表日期 | 1983-05-10 |
| 专利号 | JP1983077259A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device |
| 英文摘要 | PURPOSE:To prevent the separation of a wiring of semiconductor device by a method wherein a binder of thin film of Ti, Cr, etc., having favorable adhesion is provided between a barrier metal of Mo, etc., and the metal wiring. CONSTITUTION:An N type GaAlAs clad layer 6, an N type GaAlAs active layer 7, a P type GaAlAs clad layer 8, and an N type GaAs layers 9 are formed on an N type GaAs substrate 1 according to the liquid phase growth method, a mask 10 having a slender opening of 2mum width is provided on the layer 9, and Zn is diffused to form a P type layer 1 Then an ohmically connecting layer 12 of Ti or Cr, an Mo barrier metal layer 4, and a binder layer 13 of Ti or Cr are evaporated in order, and an electrode wiring layer 4 of Au or Ag is adhered. After thickness of the substrate 1 is regulated to about 100mum, an AuGe layer 14, an Ni layer 15 are evaporated, a binder layer 13 of Ti or Cr is accumulated, and an electrode 5 of Au or Ag is adhered to complete. By this constitution, the separation of the electrode wiring can be prevented. |
| 公开日期 | 1983-05-10 |
| 申请日期 | 1981-11-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82886]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | SAITOU KATSUTOSHI,MORI MITSUHIRO,MORI TAKAO,et al. Semiconductor device. JP1983077259A. 1983-05-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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