半導体レーザ
文献类型：专利
| 作者 | 八木 克己 |
| 发表日期 | 1997-10-17 |
| 专利号 | JP2708744B2 |
| 著作权人 | 三洋電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ |
| 英文摘要 | PURPOSE:To reduce the resistance of an element and to increase the upper limit of modulation frequency by forming a dual barrier structure in one of a pair of clad layers which interpose an active layer. CONSTITUTION:A semiconductor laser is constituted by laminating a buffer layer 12, the first clad layer 13, an active layer 14, the second clad layer 15 and a cap layer 17 on a substrate 1 A material which has greater band gap energy than that of the active layer 14 is used for a pair of the first clad layer 13 and the second clad layer 15 which interpose the active layer 14, a pair of barrier layers 16, 16 is provided in the second clad layer 15 which is one of the pair of the clad layers 13, 15 and a dual barrier structure is formed. By forming the dual barrier structure in the clad layer 15 in this way, the resistance of an element can be reduced and the upper limit of modulation frequency can be increased. |
| 公开日期 | 1998-02-04 |
| 申请日期 | 1986-11-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82892]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三洋電機株式会社 |
| 推荐引用方式 GB/T 7714 | 八木 克己. 半導体レーザ. JP2708744B2. 1997-10-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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