Semiconductor laser device
文献类型：专利
| 作者 | MOGI NAOTO; OKAJIMA MASASUE; MUTOU YUUHEI |
| 发表日期 | 1985-01-25 |
| 专利号 | JP1985014482A |
| 著作权人 | TOSHIBA KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To improve the temperature characteristics and to obtain a sufficiently large current constricting effect by a method wherein an optical waveguide path layer, whose refractive index is larger than that of a clad layer, is provided between an active layer and a current stopping layer and the thickness of the optical waveguide path layer is made thicker sufficiently. CONSTITUTION:An n type Ga0.45Al0.55As layer 12, an undopped n type Ga0.88 Al0.12As layer 13, a p type Ga0.63Al0.37As layer 14 and an n type GaAs layer 15 are formed by growth on an n type GaAs substrate 11 with the face direction (100) in the order described. Then, a resist 21 is formed on the current stopping layer 15 excluding a stripe part and a selective etching is performed on the current stopping layer 15 using the resist 21 as a mask up to the depth to reach the optical waveguide path layer 14. As a result, a stripe-shaped groove part 8 is formed in the current stopping layer 15. Then, a p type Ga0.55Al0.45As layer 16 and a p type GaAs layer 17 are successively grown on the total surface using an MOCVD method again. After this, a wafer obtained by vacuum-evaporating a Cr/Au as an electrode on the (p) side and an AuGe-Au as an electrode on the (n) side is cut to the length of the resonator. |
| 公开日期 | 1985-01-25 |
| 申请日期 | 1983-07-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82897]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA KK |
| 推荐引用方式 GB/T 7714 | MOGI NAOTO,OKAJIMA MASASUE,MUTOU YUUHEI. Semiconductor laser device. JP1985014482A. 1985-01-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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