Semiconductor laser apparatus
文献类型：专利
| 作者 | MURASAWA, SATOSHI; TAKAYAMA, TORU; HASEGAWA, YOSHIAKI |
| 发表日期 | 2012-03-06 |
| 专利号 | US8130805 |
| 著作权人 | PANASONIC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser apparatus |
| 英文摘要 | A semiconductor laser apparatus includes, on a substrate, a first-conductivity type layer, an active layer, a second-conductivity type layer having a ridge extending along an optical waveguide direction, and a current blocking layer formed on sides of the ridge. The ridge is disposed to separate the substrate into a first region having a first width, and a second region having a second width greater than the first width, in a direction perpendicular to the optical waveguide direction. The second-conductivity type layer has a shock attenuating portion having a height greater than or equal to that of the ridge, on sides of the ridge. In the second region, a trench extending from an upper surface of the shock attenuating portion, penetrating at least the active layer, and reaching the first-conductivity type layer, is formed along the optical waveguide direction. |
| 公开日期 | 2012-03-06 |
| 申请日期 | 2010-02-16 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82922]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | PANASONIC CORPORATION |
| 推荐引用方式 GB/T 7714 | MURASAWA, SATOSHI,TAKAYAMA, TORU,HASEGAWA, YOSHIAKI. Semiconductor laser apparatus. US8130805. 2012-03-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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