Manufacture of monolithic semiconductor laser array with two wavelengths
文献类型：专利
| 作者 | FUKUNAGA TOSHIAKI; WATANABE AKIRA; YAMADA TOMOYUKI; SANO KAZUYA |
| 发表日期 | 1986-01-16 |
| 专利号 | JP1986008984A |
| 著作权人 | OKI DENKI KOGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of monolithic semiconductor laser array with two wavelengths |
| 英文摘要 | PURPOSE:To simplify the manufacturing processes extremely in comparison with the case requiring the conventional zinc diffusing process and to shorten the manufacturing time period, by incorporating an inner-current constrictive layer by two liquid phase epitaxial growths. CONSTITUTION:A p-GaAs substrate 1 is prepared. A mesa-stripe shaped wide first protruded part 2 and a narrow second protruded part 3 are formed. A width W1 is made to be -10mum. A width W2 is set at the optimum value corresponding to the applications of a laser array to be manufactured. The height of d1 of the stripe is set at -5mum. The interval between both protruded parts 2 and 3 is determined so that two laser elements are formed and can be separated to each other. Then, on the substrate 1 having the protruded parts and recess parts, an n-GaAs layer 6, which is used as a current constrictive layer, is grown by the first liquid phase epitaxial growth. Then, the surface is made flat. In this GaAs layer 6, diffusion of minority carriers caused by oscillating light is prevented, and the function of the current constriction can be imparted. |
| 公开日期 | 1986-01-16 |
| 申请日期 | 1984-06-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82929]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI DENKI KOGYO KK |
| 推荐引用方式 GB/T 7714 | FUKUNAGA TOSHIAKI,WATANABE AKIRA,YAMADA TOMOYUKI,et al. Manufacture of monolithic semiconductor laser array with two wavelengths. JP1986008984A. 1986-01-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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