Semiconductor laser element
文献类型：专利
| 作者 | KANAI MIYO; YAMAGUCHI KEN; UDA TAKESHI; OTOSHI SO; MURAYAMA YOSHIMASA; KAYANE NAOKI |
| 发表日期 | 1987-06-26 |
| 专利号 | JP1987143491A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To prevent the deterioration of a semiconductor laser element from its groove shoulder part, by making the neighboring layer with the shoulder part in the form of a groove having higher resistivity than the neighboring layer with other parts of the groove, in order to restrain current concentration to the groove shoulder part. CONSTITUTION:After a high resistivity layer 9 of N-type GaAl0.45As0.55 is deposited on an N-type GaAs substrate 1, a groove is formed by chemical etching. Then, burying the groove, a clad layer 2 of N-type GaAl0.45As0.55 is deposited, and subsequent lamination of an active layer 3 of P-type GaAl0.14 As0.86, a clad layer 4 of P-type GaAl0.145Al0.55P, and a cap layer 5 of P-type GaAs is performed. An electrode 6 of AuGeNi-Au and an electrode 7 of Cr-Au are formed by vapor deposition. In this structure, the layer 9 neighboring with the near part of a groove shoulder 8 has higher resistivity than the substrate 1 neighboring with other parts of the groove, so that a current is easy to flow into the substrate 1, and current concentration to the groove shoulder part is restrained. Deterioration of the groove part of element is prevented, and a semiconductor laser element of high reliability is obtained, thereby. |
| 公开日期 | 1987-06-26 |
| 申请日期 | 1985-12-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82933]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | KANAI MIYO,YAMAGUCHI KEN,UDA TAKESHI,et al. Semiconductor laser element. JP1987143491A. 1987-06-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。