Semiconductor laser
文献类型：专利
| 作者 | KAWAMA YOSHITATSU; TAKEMOTO AKIRA; NAMISAKI HIROBUMI |
| 发表日期 | 1989-10-11 |
| 专利号 | JP1989253982A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser having predetermined electrodes to be easily formed, high yield and desired characteristics by forming a second conductivity type impurity region in width larger than that of a light emitting region in a predetermined depth from the main face of a semiconductor layer on the light emitting region. CONSTITUTION:An impurity is selectively injected to the part of a multilayer semiconductor layer including a lower clad layer 2, a multiplex quantum well layer 3 and an upper clad layer 4 to be formed on a board 1, and a first conductivity type impurity region 8 is formed except a predetermined region. A light emitting region 10 disposed adjacent to the region 8 and for radiating a laser light to the layer 3 of the predetermined region is formed. Further, a second conductivity type impurity region 16 having a larger width size than that of the region 10 is formed on the region 10, and electrodes 18 are arranged on an impurity region 16. Thus, the predetermined electrodes 18 are formed, and a semiconductor laser having predetermined characteristics can be obtained with high yield. |
| 公开日期 | 1989-10-11 |
| 申请日期 | 1988-04-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82938]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KAWAMA YOSHITATSU,TAKEMOTO AKIRA,NAMISAKI HIROBUMI. Semiconductor laser. JP1989253982A. 1989-10-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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