Visible light emitting element
文献类型：专利
| 作者 | NOZAKI CHIHARU; KOKUBU YOSHIHIRO |
| 发表日期 | 1989-11-17 |
| 专利号 | JP1989286480A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Visible light emitting element |
| 英文摘要 | PURPOSE:To stabilize a band gap of a laser with good reproducibility, to allow the laser to oscillate at a stable wavelength and to improve the lifetime thereof by forming the laser of an InGaAlP-type semiconductor while forming an InGaP active layer using an InGaP film having disordered atomic structure not having superlattice structure. CONSTITUTION:On an N-type GaAs substrate 32, there is provided a double hetero junction consisting of an N-type InGaAlP clad layer 33, an InGaP active layer 44 and a P-type InGaAlP clad layer 35. The active layer is formed under the conditions that a ratio of a III-compound to a V-compound (V/III) is 100-200, an amount of dopant represented by carrier concentration is 1X10cm or less for the N-type and a growing temperature is at least 800 deg.C. The active layer thus obtained has a disordered atomic structure instead of superlattice structure. The laser having such film oscillates stably at a wavelength of 6525Angstrom . Accordingly, the InGaAlP semiconductor laser device is allowed to oscillate at a controlled and stable wavelength. |
| 公开日期 | 1989-11-17 |
| 申请日期 | 1988-05-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82944]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | NOZAKI CHIHARU,KOKUBU YOSHIHIRO. Visible light emitting element. JP1989286480A. 1989-11-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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