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文献类型：专利
| 作者 | MATSUDA KENICHI; FUJITA TOSHIHIRO; ODANI JUN; SERIZAWA AKIMOTO |
| 发表日期 | 1990-12-27 |
| 专利号 | JP1990062957B2 |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To keep a three-dimensional optical waveguide layer from positional limitations by a method wherein a load-type optical waveguide is constituted by providing on an optical waveguide layer a striped load layer formed of a chemical semiconductor thin film similar to that of an isolating layer. CONSTITUTION:An optical waveguide layer 15 is formed on a chemical semiconductor substrate 14. A portion of an isolating layer 16a with its band gap larger than that of the layer 15, an activation layer 17 with its band gap smaller than that of the layer 15, and a confinement layer 18 are formed on the layer 15, for the constitution of a semicondutor laser section 19. A striped load layer 16b composed of the same chemical semiconductor constituting the layer 16a is formed on the layer 15 which, together with the layer 15 just under the layer 16b, constitutes an optical waveguide 20. The layer 15 is buried in a layer 23. The waveguide 20 constructed as such results in a three-dimensional waveguide wherein the light is confined also in the lateral direction. With the device being designed as such, no limitations are encountered when positioning the three- dimensional waveguide and the striped direction of the active optical element and the path in the three-dimensional waveguide may be easily aligned to each other. |
| 公开日期 | 1990-12-27 |
| 申请日期 | 1984-03-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82948]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | MATSUDA KENICHI,FUJITA TOSHIHIRO,ODANI JUN,et al. -. JP1990062957B2. 1990-12-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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