Semiconductor laser device and manufacture thereof
文献类型：专利
| 作者 | HATTORI AKIRA; SONODA TAKUJI |
| 发表日期 | 1991-04-17 |
| 专利号 | JP1991091985A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and manufacture thereof |
| 英文摘要 | PURPOSE:To improve a semiconductor laser device of this design in operating temperature characteristics so as to enable it to carry out a high output operation by a method wherein a GaAs contact layer large in thermal conductivity is provided on a current block layer. CONSTITUTION:An N-type Al0.5Ga0.5As lower clad layer 2, an N-type or a P-type Al0.15Ga0.85As active layer 3, a p-type Al0.5Ga0.5As upper clad layer 4, an N-type GaAs current block layer 5, and a normal mesa stripe groove 6 are formed on an N-type GaAs substrate 1, where a P-type Al0.5Ga0.5As second upper clad layer 7 and a P-type GaAs cap layer 8 are formed on the normal mesa stripe groove 6 and a P-type GaAs contact layer 9 is formed on the cap layer 8 and the current block layer 5. That is, the GaAs contact layer 9 large in thermal conductivity is formed directly on the current block layer 5. Therefore, a semiconductor laser of this design can be made small in heat resistance. By this setup, the semiconductor laser device is improved in temperature characteristics, able to perform a high output operation, and improved in reliability. |
| 公开日期 | 1991-04-17 |
| 申请日期 | 1989-09-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82954]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | HATTORI AKIRA,SONODA TAKUJI. Semiconductor laser device and manufacture thereof. JP1991091985A. 1991-04-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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