Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | KUDO KAZUHIRO; TOYODA YUKIO |
| 发表日期 | 1987-07-22 |
| 专利号 | JP1987165990A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To perform a high single mode laser and to improve a yield by obtaining the groove of a readily buried and grown shape by forming the width of an internal reflecting surface of an internal reflecting interference type laser in approx. 1/4 wavelength + or -10% of a light in the crystal. CONSTITUTION:A Te-doped N-type InP clad layer 3, a non-doped InGaAsP active layer 4, a Zn-doped P-type InP clad layer 5, and a P-type InGaAsP electrode contact layer 6 are laminated and liquid epitaxially grown on an Sn-doped N-type InP substrate 1, and the entire surface is covered with an SiO2 mask layer 7. Then, a strip pattern having line width d1=0.1mum, crystal azimuth (0, 1, -1) and d2=3mum, (011) is formed by an electron beam photoelectric method, and mesa and reverse mesa types are formed by a chemical etching method. Then, a reactive ion etching is executed to form a groove for burying having a line width d3=0.13mum+ or -0.02mum is formed on the layer 4. |
| 公开日期 | 1987-07-22 |
| 申请日期 | 1986-01-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82957]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | KUDO KAZUHIRO,TOYODA YUKIO. Semiconductor laser and manufacture thereof. JP1987165990A. 1987-07-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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