Semiconductor laser device
文献类型：专利
| 作者 | SHIGE NORIYUKI; SAITOU KAZUTOSHI; KURATA KAZUHIRO |
| 发表日期 | 1983-11-17 |
| 专利号 | JP1983197791A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a laser device enabling basic mode to oscillate continuously at low current subject to room temperature by a method wherein a band-like P type GaAs epitaxial layer is provided on the surface of N type GaAs substrate to specify a conductive region. CONSTITUTION:A P type epitaxial layer 10 is laminated on (100) surface of mirror ground N type GaAs substrate 1 to open a hole with specified width in the (110) direction. Firstly N type GaAlAs layer 2, no additive GaAs layer 3, P type GaAlAs layer 4 and P type GaAs layer 5 are respectively deposited. The mixed crystal ratio at the layers 2, 4 is 0.3. Secondly, after evaporating Cr-Au layer 8 on the layer 5, the substrate 1 is chemically ground and adjusted up to specified thickness further evaporating Au-Ge-Ni layer 11 to complete the laser device. In such a constitution, the efficiency deterioration due to current expansion and absorption loss of rejunction radiation beams etc. may be prevented even at narrower width of conduction region to obtain a laser device enabling basic mode to oscillate continuously at low threshold value current. |
| 公开日期 | 1983-11-17 |
| 申请日期 | 1983-04-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82965]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | SHIGE NORIYUKI,SAITOU KAZUTOSHI,KURATA KAZUHIRO. Semiconductor laser device. JP1983197791A. 1983-11-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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