Method for fabricating an optical semiconductor device
文献类型：专利
| 作者 | SASAKI, TATSUYA; MITO, IKUO; KATOH, TOMOAKI |
| 发表日期 | 1993-10-05 |
| 专利号 | US5250462 |
| 著作权人 | NEC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for fabricating an optical semiconductor device |
| 英文摘要 | A method for fabricating an optical semiconductor device includes the steps of forming at least two stripes (21) of dielectric parallel to each other with a predetermined interval on a semiconductor substrate (1), growing a crystal selectively between the two stripes, and forming a multi-layer structure (2,3,4) which is required to have a width determined by the crystal grown between the two stripes. In such a method, the width of the multi-layer structure including an active layer (3) or a waveguide is controlled precisely, because there is no step of etching a semiconductor layer, so that the characteristics of the device may improve and the yield may increase. |
| 公开日期 | 1993-10-05 |
| 申请日期 | 1991-08-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82970]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORPORATION |
| 推荐引用方式 GB/T 7714 | SASAKI, TATSUYA,MITO, IKUO,KATOH, TOMOAKI. Method for fabricating an optical semiconductor device. US5250462. 1993-10-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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