Semiconductor laser device
文献类型：专利
| 作者 | KONDO MASAFUMI; SASAKI KAZUAKI; SUYAMA NAOHIRO; TAKAHASHI KOUSEI; HOSODA MASAHIRO; HAYAKAWA TOSHIRO |
| 发表日期 | 1990-06-12 |
| 专利号 | JP1990152292A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To provide a semiconductor laser device for an optical disk system with reduced astigmatism and with satisfactory return light noise characteristics by reducing the thickness of a second cladding layer at opposite sides of a ridge region move than that in a resonator, in the vicinity of the exit end surface of the laser light. CONSTITUTION:A ridge wavelength type semiconductor laser device includes, on an n-GaAs substrate 1, an n-GaAs buffer layer 2, an n-Al0.5Ga0.5As first cladding layer 3, an undoped AlxGa1-xAs GRIN layer 4, an undoped multiple quantum well active layer 5, an undoped AlyGa1-yAs GRIN layer 6, a p-Al0.5Ga0.5 As second cladding layer 7 (1mum thick), and a p-GaAs contact layer 8, all being grown by a MBE process. The thickness of the second cladding layer 7 on opposite sides of the ridge region is selected to be 0.4mum for example. Further, the thickness of the second cladding layer 7 on opposite sides of the ridge region located within 100mum from the laser light exit end surface is selected to be 0.2mum for example. The resulting semiconductor laser device is excellent in optical output, return light amount, and relative noise intensity, and is reduced in astigmatism. |
| 公开日期 | 1990-06-12 |
| 申请日期 | 1988-12-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82975]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | KONDO MASAFUMI,SASAKI KAZUAKI,SUYAMA NAOHIRO,et al. Semiconductor laser device. JP1990152292A. 1990-06-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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