Semiconductor optical integrated device
文献类型：专利
| 作者 | ONODERA NORIAKI; SATO SHIRO |
| 发表日期 | 1987-07-14 |
| 专利号 | JP1987158380A |
| 著作权人 | RICOH CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor optical integrated device |
| 英文摘要 | PURPOSE:To obtain a semiconductor optical integrated device, which is manufactured simply and has excellent performance and solid structure, by integrally forming a light-emitting section and a waveguide section on the same substrate, separated mutually at a regular interval. CONSTITUTION:A projection or a stepped section 10a is shaped onto the surface of an N-type GaAs substrate 10 through a photolithographic technique. An N-type Al0.4Ga0.6As clad layer 11, a GaAs active layer 12, a P type Al0.4Ga0.6As clad layer 13, an N-type Al0.1Ga0.9As waveguide layer 14, an N type Al0.4Ga0.6 As clad layer 15 and an N-type GaAs cap layer 16 are grown in succession on the substrate 10, to which the band-shaped projection or the stepped section 10a is formed, through an epitaxial growth method. Zn is diffused through the photolithographic technique to shape a diffusion region 19, and a resonator surface 21a is formed through etching. Lastly, a P-type ohmic electrode 17 and an N-type ohmic electrode 18 are formed. |
| 公开日期 | 1987-07-14 |
| 申请日期 | 1985-12-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82976]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | RICOH CO LTD |
| 推荐引用方式 GB/T 7714 | ONODERA NORIAKI,SATO SHIRO. Semiconductor optical integrated device. JP1987158380A. 1987-07-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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