Semiconductor laser device
文献类型：专利
| 作者 | SEKO YASUJI; KAMIYANAGI KIICHI; NAKAYAMA HIDEO; FUKUNAGA HIDEKI; UEKI NOBUAKI |
| 发表日期 | 1992-09-10 |
| 专利号 | JP1992255286A |
| 著作权人 | 富士ゼロックス株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To provide a semiconductor laser device which is excellent in luminous efficiency and oscillates laser rays which are prevented from shifting from a target wavelength to a shorter wavelength by a method wherein Ge is used as diffusion impurities in place of Si which requires a thermal treatment carried out at a high temperature for a long time or Zn which is hard to be controlled in diffusion length. CONSTITUTION:A semiconductor laser device is provided with an active layer 5 composed of a quantum well layer 4 of mixed crystal and barrier layers 31 and 32 provided sandwiching the quantum well layer 4 between them, Ge is thermally diffused into a part of the active layer 5 to turn the quantum well layer 4 and the barrier layers 31 and 32 at the part where Ge has been diffused into a non-luminous region 7 of mixed crystal small in refractive index through the intermediary of Ge, and on the other hand, the other part of the quantum well layer 4 and the barrier layers 31 and 32 where no Ge has been diffused is made to serve as a light emitting region 8 which functions also as a refractive index waveguide. |
| 公开日期 | 1992-09-10 |
| 申请日期 | 1991-02-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82980]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 富士ゼロックス株式会社 |
| 推荐引用方式 GB/T 7714 | SEKO YASUJI,KAMIYANAGI KIICHI,NAKAYAMA HIDEO,et al. Semiconductor laser device. JP1992255286A. 1992-09-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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