Semicondutor laser device
文献类型：专利
| 作者 | SATO SHIRO; ONODERA NORIAKI |
| 发表日期 | 1987-07-14 |
| 专利号 | JP1987158378A |
| 著作权人 | RICOH CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semicondutor laser device |
| 英文摘要 | PURPOSE:To reduce threshold currents easily, and to obtain a stable mode by forming a bent active layer, shaping current constriction structure by the active layer and a diffusion region and demarcating refractive index waveguide structure on the basis of index difference in the transverse direction. CONSTITUTION:A mesa-striped projection 1a having height of 1-2 micron and width of 1-4 micron is shaped to the upper surface of an N-type GaAs substrate 1 through photolithography and etching. An N-type AlGaAs first optical confinement layer 2, a GaAs active layer 3, a P-type AlGaAs second optical confinement layer 4 and an N-type GaAs protective layer 10 are laminated in succession through an organic metal vapor-phase growth method. An N-type GaAs layer 5 is formed on the protective layer 10 through a liquid-phase epitaxial growth method, and a P-type GaAs electrode layer 6 is laminated and shaped on the layer 5 so that an upper surface thereof is flattened substantially. Zn is diffused near the top of the projecting section at approximately 750 deg.C from an upper section, the diffusion front of Zn is faced oppositely and positioned to the projection 1a in the projecting section of the layer 4, and electrodes 7 and 8 are applied to upper and lower sections. |
| 公开日期 | 1987-07-14 |
| 申请日期 | 1985-12-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82989]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | RICOH CO LTD |
| 推荐引用方式 GB/T 7714 | SATO SHIRO,ONODERA NORIAKI. Semicondutor laser device. JP1987158378A. 1987-07-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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