Semiconductor laser device
文献类型：专利
| 作者 | TSUJI SHINJI; KAJIMURA TAKASHI; KAYANE NAOKI; FUJISAKI YOSHIHISA; KASHIWADA YASUTOSHI; HIRAO MOTONAO |
| 发表日期 | 1985-07-06 |
| 专利号 | JP1985126881A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To enable optical communication extending over a long distance by juxtaposing a plurality of laser light-emitting sections controlled in a transverse mode on the same surface, optically coupling each laser light-emitting section in a Bragg reflection region having periodicity and obtaining a longitudinal single mode enabling operation at a high output. CONSTITUTION:A semiconductor laser device is constituted by a laser light- emitting section 1 consisting of laser light-emitting sections 1a-1e controlled in a transverse mode and a diffraction grating section 2. Several laser light-emitting section 1a-1e is formed in such a manner that a diffraction grating 31 is prepared on an N type crystal 3, a guide layer 4 is formed, the guide layer 4 is removed selectively through etching by an etching liquid, and an active layer 5, an anti-meltback layer 6, a clad layer 7 and a P type surface layer 8 are grown in succession through an epitaxial method. A P type layer 71, an N type layer 72 and a surface layer 73 are shaped as a laser crystal, and a P type electrode 9 and an N type electrode 10 are evaporated and shaped on both surfaces. |
| 公开日期 | 1985-07-06 |
| 申请日期 | 1983-12-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83016]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | TSUJI SHINJI,KAJIMURA TAKASHI,KAYANE NAOKI,et al. Semiconductor laser device. JP1985126881A. 1985-07-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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