Manufacture of semiconductor laser device
文献类型：专利
| 作者 | KOIZUMI YOSHIHIRO |
| 发表日期 | 1989-08-31 |
| 专利号 | JP1989218084A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device which is superior in characteristics, by forming a high resistance semiconductor layer containing impurities which form a deep level on the plane (100) of a conductivity type semiconductor substrate. CONSTITUTION:This device permits a high resistance semiconductor layer 11 containing impurities which form a deep level on the plane (100) of a conductivity type semiconductor substrate 10 to perform an epitaxial growth. Then, a dielectric etching mask 12 which opens an aperture into a stripe like shape in the direction of is formed. B plane (111) is formed into side walls and a groove 16 having a flat base and having a depth reaching to the semiconductor substrate is formed. After removing the mask 12, respective layers: the first clad layer 13 having the same conductivity type and having almost the same composition as those of the semiconductor substrate 10; an active layer 14 which is not doped and has a forbidden band width that is narrower than that of the first clad layer; the second clad layer 15 which has the conductivity type opposite to that of the substrate 10 and has nearly the same composition as that of the first clad layer are formed at a groove part 16. Then, this device makes the second clad layer 15 grow until its surface becomes flat. |
| 公开日期 | 1989-08-31 |
| 申请日期 | 1988-02-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83022]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | KOIZUMI YOSHIHIRO. Manufacture of semiconductor laser device. JP1989218084A. 1989-08-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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