Semiconductor laser device and manufacturing process
文献类型：专利
| 作者 | TADA KUNIO; NAKANO YOSHIAKI; RA TAKESHI; INOUE TAKESHI; IWAOKA HIDETO |
| 发表日期 | 1991-03-04 |
| 专利号 | JP1991049285A |
| 著作权人 | HIKARI KEISOKU GIJUTSU KAIHATSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and manufacturing process |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device capable of generating induced emission light efficiently by disordering a quantum well layer contained in an active layer and hence forming a diffraction grating on said active layer. CONSTITUTION:An active layer contains a single or multiple quantum well layer 7W. The quantum well layer 7W is designed to disorder in conformity with the cycle of a diffraction of grating. This structure includes a first process which grows a cladding layer 3, a second layer which grows the active layer 7 on the cladding layer 3, and a third process which grows a cladding layer 8 on the active layer 7. The second process is a manufacturing process which includes a process which forms an active layer having e quantum well layer 7W and includes a process which is provided between the first and the second process so as to disorders the layer 7 in conformity the cycle of the diffraction grating. The diffraction grating is produced under the above structure as a result when the layer 7W is disordered and eliminated in conformity with the cycle of the diffraction grating. This construction makes it possible to produce a diffraction grating, where there is no defect in semiconductor structure, on the active layer 7. |
| 公开日期 | 1991-03-04 |
| 申请日期 | 1989-07-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83025]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HIKARI KEISOKU GIJUTSU KAIHATSU KK |
| 推荐引用方式 GB/T 7714 | TADA KUNIO,NAKANO YOSHIAKI,RA TAKESHI,et al. Semiconductor laser device and manufacturing process. JP1991049285A. 1991-03-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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