Semiconductor laser
文献类型：专利
| 作者 | NOMURA HIDENORI |
| 发表日期 | 1987-02-12 |
| 专利号 | JP1987032679A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser having a current narrowing structure characterized by an excellent current blocking characteristic and small electrostatic capacitance, by utilizing the physical phenomenon, in which the resistance of a high resistance semiconductor, which has been grown epitaxially, is decreased by the impurity diffusion from a neighboring layer after the growing. CONSTITUTION:In a regrowing process by a molecular beam epitaxy method, a cap layer 5 is evaporated during the heating of a substrate before growing. A high concentration layer of Be is formed on the surface of a confinement layer 4. When a high resistance layer 6 is grown on the confinement layer 4, a high resistance layer 6 in a region at the upper part of a mesa stripe becomes a Be doped state owing to the thermal diffusion of Be. The resistance of the layer 6a becomes low. A current path is automatically formed on an active layer 3. Even in the high resistance layer 6 other than the region at the upper part of the mesa stripe, solid phase diffusion of Be from an embedded layer 7 is yielded. Since the doped concentration of the embedded layer 7 is not so high, the high resistance state is maintained intact, and the function of a current blocking layer is provided. |
| 公开日期 | 1987-02-12 |
| 申请日期 | 1985-08-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83028]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | NOMURA HIDENORI. Semiconductor laser. JP1987032679A. 1987-02-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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