Semiconductor light-emitting device
文献类型：专利
| 作者 | SOUDA HARUHISA |
| 发表日期 | 1985-10-25 |
| 专利号 | JP1985213075A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting device |
| 英文摘要 | PURPOSE:To change a longitudinal mode into singleness, and to improve the stability of oscillating wavelengths by forming a diffraction grating parallel with the surface of a semiconductor substrate and a striped groove using a diffraction graing or a surface parallel with the diffraction grating as a base and shaping an active layer in the groove. CONSTITUTION:A diffraction grating G is formed to the (100) surface of an N type InP substrate 1 An N type InGaAsP layer 12 and a P type InP layer 13 are grown on the surface of the substrate 1 A mask to which a striped opening extending in the direction is shaped is formed, and a striped groove is formed to the InP layer 13 through etching. An N type InP or InGaAsP layer 14 is grown in the striped groove through a liquid phase epitaxial growth method, and an InGaAsP active layer 15 is grown continuously. Layers 14a, 15a are each grown at the same time as the layers 14 and 15. A P type InP layer 16 and a P type InGaAsP layer 17 are grown. A P side electrode 18 and an N side electrode 19 are formed. |
| 公开日期 | 1985-10-25 |
| 申请日期 | 1984-04-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83030]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | SOUDA HARUHISA. Semiconductor light-emitting device. JP1985213075A. 1985-10-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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