Semiconductor laser
文献类型：专利
| 作者 | AOYANAGI TOSHITAKA; MOTODA TAKASHI |
| 发表日期 | 1990-10-12 |
| 专利号 | JP1990253682A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser which oscillates with a low threshold by a method wherein impurity is diffused from a surface layer side or a crystal substrate side to a depth middle of a lower cladding layer or an upper cladding layer so as not to reach a light emitting part to form a region whose conductivity type is opposite to that of the lower cladding layer or the upper cladding layer in the lower cladding layer or the upper cladding layer. CONSTITUTION:An n-type Si diffused region 10 is formed to a depth middle of a p-type AlxGa1-xAs lower cladding layer 4 by diffusing Si from a surface side to form p-n junctions 11 having high built-in potentials in the p-type AlxGa1-xAs lower cladding layer 4. As the potential barriers are higher than the potential barriers of p-i-n junctions formed between an undoped AlyGa1-yAs active layer 5 and upper and lower cladding layers 6 and 4 in a bent part, ineffectual currents 9 are hardly injected into the flat parts on the sides. In other words, the ineffectual currents 9 are blocked by the p-n junctions 11 formed in the upper and lower cladding layers 6 and 4 and effective currents 8 only are injected into the bent or warped part. With this constitution, a semiconductor laser which oscillates with a low threshold current can be obtained. |
| 公开日期 | 1990-10-12 |
| 申请日期 | 1989-03-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83033]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | AOYANAGI TOSHITAKA,MOTODA TAKASHI. Semiconductor laser. JP1990253682A. 1990-10-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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