Semiconductor laser
文献类型：专利
| 作者 | MIYAZAKI KOICHI |
| 发表日期 | 1992-07-28 |
| 专利号 | JP1992206887A |
| 著作权人 | ソニー株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser having stable characteristics such as excellent reliability, responding characteristic in high yield by setting lattice constant of a compound semiconductor substrate of an epitaxially grown substrate and a compound semiconductor layer to be epitaxially grown thereon to a special relation and a special range. CONSTITUTION:The lattice constant of a substrate 1 is set to (a), the lattice constants of layers 2-6 are differentiated from each other, and set to the value of (b) to satisfy the relation of -20X10<-4=b-a/a<0. Further, the substrate 1 and the layers 2-6 are so set as to repeat the large and small relation of the constants, i.e., to set both the constants of the upper and lower epitaxial layers of the layers 2-6 to small or large values. Since a stress of compressing direction or elongating direction is generated together at upper and lower surfaces of the semiconductor layers, slip of a crystal due to a shearing stress is scarcely generated. |
| 公开日期 | 1992-07-28 |
| 申请日期 | 1990-11-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83041]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ソニー株式会社 |
| 推荐引用方式 GB/T 7714 | MIYAZAKI KOICHI. Semiconductor laser. JP1992206887A. 1992-07-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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