Semiconductor optical element
文献类型：专利
| 作者 | MITOMI OSAMU; WAKITA KOICHI; ODAKA ISAMU |
| 发表日期 | 1992-02-03 |
| 专利号 | JP1992030114A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor optical element |
| 英文摘要 | PURPOSE:To obtain the semiconductor optical element which can operate even if light intensity is increased by disposing the end of the prescribed electrode of the semiconductor optical element, such as optical modulator or photodetector, on the side inner than the light incident end face of an optical waveguide. CONSTITUTION:This semiconductor optical element has the 1st electrode 7 disposed on one main surface of an (n) type substrate 6, a 1st semiconductor layer 5 of an (n) type disposed on the other main surface, an electric field impressing layer 4 of a semiconductor layer of a low impurity concn. disposed thereon, a 2nd semiconductor layer 3 of a (p) type disposed on the layer 4, and the 2nd electrode 10 disposed on or in proximity to the layer 3. The optical waveguide is constituted of the layers 5, 4, 3. The current density near the light incident end is lowered and the deterioration in characteristics by the generation of heat in the element is prevented if the position of this electrode end is formed on the side inner than the light incident end part. The element is thus operated even with the incident light of a large electric power. |
| 公开日期 | 1992-02-03 |
| 申请日期 | 1990-05-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83042]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | MITOMI OSAMU,WAKITA KOICHI,ODAKA ISAMU. Semiconductor optical element. JP1992030114A. 1992-02-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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