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文献类型：专利
| 作者 | MATSUDA KENICHI; FUJITA TOSHIHIRO; ODANI JUN; SERIZAWA AKIMOTO |
| 发表日期 | 1991-02-18 |
| 专利号 | JP1991011554B2 |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To attain desired characteristics with high stability and reproducibility by a method wherein the amplitude reflectivity at each end face and the ratio of the optical length of an external optical waveguide to that of a resonator in an activation region are regulated to attain prescribed levels according to the mode of modulation adopted. CONSTITUTION:A semiconductor laser activation region 37 is positioned on an N type chemical semiconductor substrate 3 The layer 37 is constituted of the portions of an N type activation layer 32 and P type confined layer 33a, is buried in a layer 36 constituted of a P type layer 34a and N type layer 35a. An optical waveguide 38 is similar in construction to the region 37 with the exception of an N type optical waveguide layer 39 replacing the layer 32 in the region 37. In a device as such, the ratio L0/L1 wherein L0 is the optical length of the waveguide 38 and L1 the optical length of the region 37, may easily be set at a prescribed value by cleavage at an activation region end face 40 and optical waveguide end face 4 The amplitude reflectivily r0 at the waveguide end face 41 and the amplitude reflectivity r1 at the resonator end face 45 of the region 37 may also be regulated. With L0/L1, r0, r1 being set at desired levels respectively, a longitudinal single mode and longitudinal multimode may be realized in the oscillation characteristics. |
| 公开日期 | 1991-02-18 |
| 申请日期 | 1984-03-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83047]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | MATSUDA KENICHI,FUJITA TOSHIHIRO,ODANI JUN,et al. -. JP1991011554B2. 1991-02-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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