Semiconductor light emitting device and manufacture thereof
文献类型：专利
| 作者 | SHIMA KATSUTO; HANAMITSU KIYOSHI; NAGAI HARUO |
| 发表日期 | 1983-02-03 |
| 专利号 | JP1983018991A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain stable and lateral mode oscillation of a semiconductor light emitting device by a method wherein a step part is provided on the surface of a semiconductor substrate, current obstructing layers are formed on the respective flat faces of an upper tier and a lower tier, and the first clad layer, an active layer, and the second clad layer are laminated on the whole surface containing the layers thereof making the surface flat, and a zinc diffusion region to enter into the first clad layer is provided positioning at the lower tier part. CONSTITUTION:The directional reverse mesa type step part is formed by etching on the N type GaAs substrate 11 having the (100) face as the main face, and the Ga1-XAlXAs current obstructing layers 19 are formed respectively by liquid phase growth on the flat surfaces of the upper tier and the lower tier of the step part. Then the first N type Ga1-YAlYAs clad layer 12, the P type or the N type Ga1-ZAlZAs active layer 13 (Z |
| 公开日期 | 1983-02-03 |
| 申请日期 | 1981-07-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83049]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | SHIMA KATSUTO,HANAMITSU KIYOSHI,NAGAI HARUO. Semiconductor light emitting device and manufacture thereof. JP1983018991A. 1983-02-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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