Semiconductor light-emitting device
文献类型：专利
| 作者 | KIHARA KATSUHIRO; OGITA SHOICHI |
| 发表日期 | 1989-03-20 |
| 专利号 | JP1989074783A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting device |
| 英文摘要 | PURPOSE:To obtain an erbium-doped semiconductor laser in single wavelength oscillation having no crystal damage with erbium-doping by forming an erbium- doping region through ion implantation to an n-type InP substrate and shaping an active layer onto the substrate. CONSTITUTION:The mask of an insulating layer (an SiO2 layer) 15 is formed onto an n-type InP substrate Erbium (Er) is implanted to the InP substrate 1 through an ion implantation method to shape a doping region 3. A crystal defect is recovered through annealing treatment after ion implantation. The insulating film 15 is removed through etching, and a GaInAsP layer 2 (composition of a wavelength lambda of 53mum) as an active layer and a p-type InP layer 4 are shaped onto the InP substrate 1 through a continuous liquid-phase epitaxial growth method. Consequently, abnormal growth generated at the time of doping during conventional liquid growth can be avoided. Laser beam having a single wavelength is acquired stably by electronic energy transition by the spin-orbit interaction of doped erbium ions. |
| 公开日期 | 1989-03-20 |
| 申请日期 | 1987-09-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83058]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | KIHARA KATSUHIRO,OGITA SHOICHI. Semiconductor light-emitting device. JP1989074783A. 1989-03-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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