Semiconductor light emitting device
文献类型：专利
| 作者 | TAKAGI NOBUYUKI |
| 发表日期 | 1986-05-16 |
| 专利号 | JP1986097889A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To obtain the lateral mode stable even under high output and the like by forming a sufficient guiding in the stripe-width direction by a method wherein a region of the second conductivity type is formed in the second confinement layer, an active layer, and the first confinement layer by introducing an impurity via the fourth confinement layer of the second conductivity type which contacts the photo absorption layer outside the stripe region. CONSTITUTION:Layers from the first confinement layer 2 up to the photo absorption layer 6 are epitaxially grown on a substrate 1, and the third confinement layer 5 is exposed by stripe removal of the photo absorption layer 6. Next, the fourth confinement layer 7 and a contact layer 8 are epitaxially grown, and the acceptor impurity is diffused via these layers down to the first confinement layer 2 of the stripe region, resulting in the formation of a P type region 9. This photo absorption layer 6 serves as the mask to the confinement layer 5, etc. outside the stripe region because of higher diffusion rate than that to the confinement layers 5, 4, 2 and the active layer 3 and larger thickness, and so the layers 3 and 6 become aligned from themselves in position. |
| 公开日期 | 1986-05-16 |
| 申请日期 | 1984-10-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83062]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | TAKAGI NOBUYUKI. Semiconductor light emitting device. JP1986097889A. 1986-05-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。