Semiconductor laser array
文献类型：专利
| 作者 | YAMABAYASHI YOSHIAKI; NISHI SHIGETO |
| 发表日期 | 1988-12-27 |
| 专利号 | JP1988318790A |
| 著作权人 | 日本電信電話株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser array |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser array emitting a single beam from an end surface by a method wherein a plurality of laser resonators are arranged in a relation of position where a discontinuous phase of pi/2 is produced to the cycle of the arrangement near the center of that arrangement. CONSTITUTION:Plural number of laser resonators, which are arranged parallel and cyclically and oscillate with internal light interfering each other, are provided on the same semiconductor substrate. In such semiconductor laser array, plural laser resonators are arranged in a relation where phase discontinuity of pi/2 is produced to the cycle of the arrangement near the center of the arrangement. For example, a long and slender section with a cycle of A and parallel is provided on an n-type clad layer 1 out of a layer structure made by an n-type clad layer 1, an active layer 2, and a p-type clad layer 3, and the width of the discontinuous projecting section is made 1/4 of the cycle, that is, phase of pi/2. Thus, when the width of the projecting section and the gap of the projecting section are the equal, the width of the projecting section at the middle of the arrangement or the gap between the projecting sections is made 5 times. |
| 公开日期 | 1988-12-27 |
| 申请日期 | 1987-06-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83064]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電信電話株式会社 |
| 推荐引用方式 GB/T 7714 | YAMABAYASHI YOSHIAKI,NISHI SHIGETO. Semiconductor laser array. JP1988318790A. 1988-12-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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