Manufacture of semiconductor laser
文献类型：专利
| 作者 | FUKUZAWA TADASHI; ONO YUICHI; NAKATSUKA SHINICHI; KAJIMURA TAKASHI |
| 发表日期 | 1987-05-19 |
| 专利号 | JP1987108591A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To grow a crystal on a semiconductor with an active surface twice or more by attaching a semiconductor thin-film with a stable surface onto the surface of a semiconductor with an unstable surface, using the thin-film as a protective film and substantially annihilating the protective film by utilizing the mutual diffusion of constituent elements by an impurity. CONSTITUTION:An N-GaAlAs clad layer 2, a GaAs/GaAlAs superlattice laser active layer 3, a P-GaAlAs clad layer 4, an undoped GaAs protective layer 5, an undoped GaAlAs layer 6 and an absorption layer 7 are grown on a substrate 1 in succession. A crystal is taken out of a growth device, and dry-etched selectively by a CO2F2 group gas, GaAs 7 is removed in a striped manner, GaAlAs 6 in a region 10 is removed by a mixed liquid of hydrofluoric acid and ammonium peroxide, and the whole is introduced into a growth chamber and second growth is conducted. A P-GaAlAs clad layer 8 using Zn as a dopant and a cap layer are grown, and heat treatment is performed under As pressure. The thin-film 5 corresponding to the region 10 is eliminated by a change into an impurity-induced mixed crystal of Zn. |
| 公开日期 | 1987-05-19 |
| 申请日期 | 1985-11-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83066]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | FUKUZAWA TADASHI,ONO YUICHI,NAKATSUKA SHINICHI,et al. Manufacture of semiconductor laser. JP1987108591A. 1987-05-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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