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文献类型：专利
| 作者 | HANAMITSU KYOSHI; FUJIWARA TAKAO; OOSAKA SHIGEO |
| 发表日期 | 1988-04-26 |
| 专利号 | JP1988020036B2 |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To obtain by simple driving method microwave pulse row with quick repetition, by forming PNPN laser structure and causing the breakdown because of the N-P junction to occur distributed in the direction of the resonance. CONSTITUTION:An N type clad layer 2, a P type active layer 3, a P type clad layer 4 and an N type cap layer 5 are formed successively on an N type substrate Then to limit the oscillation region or current input region in the active layer, a P type impurities, Zn for instance, are diffused upto the midway. And the distance between the front 7 where the Zn are diffused and the layer 4 are subjected to changes cyclically or acryclically for the length of the resonance. Consequently breakdown of reverse bias junction of the layer 5 and the layer 4 occurs ununiformely in the input current to the active layer 3. Therefore gain regions and loss regions take place for the length of the resonance resulting in the pulse state of the light outputs. |
| 公开日期 | 1988-04-26 |
| 申请日期 | 1980-02-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83084]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | HANAMITSU KYOSHI,FUJIWARA TAKAO,OOSAKA SHIGEO. -. JP1988020036B2. 1988-04-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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