Manufacture of semiconductor laser
文献类型：专利
| 作者 | HORIKAWA HIDEAKI; KAWAI YOSHIO; WADA HIROSHI; OGAWA HIROSHI |
| 发表日期 | 1988-11-24 |
| 专利号 | JP1988287079A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To enable high output operation of the title laser, by forming an n-type InP current block layer on the under side of an outer waveguide path region of a distributed reflection type element of a buried BIG (Bundle Integrat ed Guide) structure. CONSTITUTION:An n-type InP current block layer 23 is formed on the part except a stripe 22 of a p-type InP substrate 21 forming a mesa type stripe 22 and thereon a p-type InP clad layer 24 is made to grow by turns so as to make the whole substrate flat. Next, a grading 25 is fixed to the side having the layer 23 underneath the surface of the layer 24. Subsequently, an active layer 27, a protective layer 28, an outer waveguide path layer 29 and a clad layer 30 are made to grow by turns. Later, an inverse mesa type stripe is formed by etching for being buried in a current constriction layer. Thereby, an inverse bias is produced on the pn junction surface of the layers 23 and 24 so that the current efficiently flows to the layer 27 solely without flowing to the layer 29. Accordingly, oscillation is made efficiently so as to obtain high output. |
| 公开日期 | 1988-11-24 |
| 申请日期 | 1987-05-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83086]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HORIKAWA HIDEAKI,KAWAI YOSHIO,WADA HIROSHI,et al. Manufacture of semiconductor laser. JP1988287079A. 1988-11-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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