Semiconductor laser and method of fabricating same
文献类型：专利
| 作者 | HATAKOSHI, GENICHI; ONOMURA, MASAAKI; RENNIE, JOHN; ISHIKAWA, MASAYUKI; NUNOUE, SHINYA; SUZUKI, MARIKO |
| 发表日期 | 2000-02-29 |
| 专利号 | US6031858 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser and method of fabricating same |
| 英文摘要 | A semiconductor laser is disclosed, which realizes a continuous oscillation in a fundamental transverse mode at a low operating voltage by a transverse mode control. This semiconductor laser is fabricated by forming successively the following layers on a sapphire substrate 10 in the order an n-type GaN contact layer, an n-type GaAlN cladding layer 13, an MQW active layer 16, a p-type GaAlN cladding layer 19, wherein the laser comprises a double heterostructure including a ridge in the shape of a stripe formed in the cladding layer 19 and a light confining layer 20 formed in a region except the ridge portion of the cladding layer 19 on the double heterostructure, wherein a refractive index of the light confining layer 20 is larger than that of a p-type GaAlN cladding layer. |
| 公开日期 | 2000-02-29 |
| 申请日期 | 1997-09-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83088]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | HATAKOSHI, GENICHI,ONOMURA, MASAAKI,RENNIE, JOHN,et al. Semiconductor laser and method of fabricating same. US6031858. 2000-02-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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