Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | ASATA SUSUMU |
| 发表日期 | 1991-02-08 |
| 专利号 | JP1991030487A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser which is low in laser inner loss and high in external differential quantum efficiency by a method wherein a low light absorbing semiconductor layer whose light absorbing coefficient is smaller than that of a P-type clad layer is provided in contact with the P-type clad layer and near an active layer, but, at least, separate from it by the wavelength of laser rays or so. CONSTITUTION:A low light absorbing semiconductor layer 11, a P-type InP clad layer 12, an InGaAsP active layer 13, and an N-type InP clad layer 14 are grown on a semi-insulating InP substrate 10. At this point, the light absorbing coefficient of the low light absorbing semiconductor layer 11 is made smaller enough than that of the P-InP clad layer 12, and the layer is provided in contact with the P-type clad layer 12 and near the active layer 13, but, at least, separate from it by the wavelength of laser rays or so. |
| 公开日期 | 1991-02-08 |
| 申请日期 | 1989-06-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83097]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | ASATA SUSUMU. Semiconductor laser and manufacture thereof. JP1991030487A. 1991-02-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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