Semiconductor laser diode
文献类型：专利
| 作者 | YAMASHITA KOJI; YOSHIDA KAZUTOMI |
| 发表日期 | 1991-10-04 |
| 专利号 | JP1991225888A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser diode |
| 英文摘要 | PURPOSE:To ensure a chip in which wavelengths are different on the same chip in a stepwise manner by charging stepwise the thickness of an active layer in the same surface. CONSTITUTION:There are provided a semiconductor substrate 1, a diffraction grating 2, a lower cladding layer 3, an active layer 4, an upper cladding layer 5, (the layers 3-5 are of a double hetero structure), an insulating film 6, and electrodes 7, 8. The thickness of the active layer 4 is altered stepwise. Accordingly, the equivalent refractive index of the active layer is different among chips 9a-9e following a relationship indicated by a curved line in the figure. Hereby, the wavelength yielded by the chips 9a-9e is stepwise different following the change in the thickness. |
| 公开日期 | 1991-10-04 |
| 申请日期 | 1990-01-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83112]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | YAMASHITA KOJI,YOSHIDA KAZUTOMI. Semiconductor laser diode. JP1991225888A. 1991-10-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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